ABSTRACT
By newly introducing both InGaP tensile strained layer as barriers of InAsP compressively strained multiple quantum wells, and InP intermediate layer between InAsP and InGaP layers, a high crystalline quality of InAsP/InGaP strain-compensated multiple quantum wells was obtained using metalorganic chemical vapor deposition on (100) InP substrate. A very low threshold current density of 300A/cm2 was achieved with an emission wavelength of 1.3μm.
