ABSTRACT
In the fabrication of multiple quantum well planar buried heterostructure laser diodes (MQW-PBH-LDs), a two-step mesa etching process comprising nonselective mesa etching followed by InP selective etching is proposed for obtaining narrow connection width between the p-InP clad layer and the p-InP blocking layer. The leakage current in 1.3μm strain-compensated MQW-PBH-LD has been remarkably reduced by using the two-step etching process for the mesa formation compared to the leakage current of conventional nonselective mesa etching. The threshold current as low as 4.6mA and the maximum slope efficiency of 0.32 mW/mA have been obtained by the using two-step etching process without any coating.
