ABSTRACT
We have introduced strain compensated layers(SCLs) into a tensile strained 630nm band AlGaInP/GaInP single quantum well laser. These SCLs result in lowering the threshold current of the laser due to improving both optical confinement and hole injection efficiency in the well. A buried ridge laser with SCLs has been fabricated by the three-step low pressure vertical metal-organic chemical vapor deposition. The threshold current of this 200 μm long laser without facet coating is 33.3mA. which reflects a 27% reduction in the threshold current compared to the threshold current of 45.4mA for laser without SCLs. Threshold current as low as 25.4mA has been obtained by coating of the facets.
