ABSTRACT
Peculiarities of the RHEED specular beam oscillation behaviour during the formation of normal (AlAs on GaAs) and inverted (GaAs on AlAs) heterointerfaces were investigated. It was demonstrated that at intermediate As4/A1 flux ratios the stabilization of 3x2 structure on growing AlAs surface is controlled by segregation of Ga atoms into growing layer. The observed phase shift of oscillation curves in [11̄0] azimuth, that accompanies the appearance of 3x2 reconstruction on growing AlAs surface, is induced by variation of the relationship between specular and Bragg components in measured signal. Contrary to the case of normal interface the process of oscillation phase variation during growth of GaAs on AlAs is completed over first 1-2 oscillations.
