ABSTRACT
Our work on high-speed InP-based (1.55/μm) lasers and integrated transmitters is described. Issues related to carrier dynamics, device design, epitaxy and fabrication, that limit the performance of these devices and OEICs are discussed.
Our work on high-speed InP-based (1.55/μm) lasers and integrated transmitters is described. Issues related to carrier dynamics, device design, epitaxy and fabrication, that limit the performance of these devices and OEICs are discussed.