Performance enhancement of non-biased symmetric self electro-optic effect device with extremely shallow multiple quantum wells using an impedancemismatched asymmetric Fabry-Perot structure

We achieved large non-biased optical bistability (NOB) and significant enhancement in the performance of symmetric self electro-optic effect device (S-SEED) by adopting both extremely shallow quantum wells (ESQWs) and impedance-mismatched asymmetric Fabry-Perot (AFP) cavity structure. From the structure we obtained values as high as 17% of reflectivity change, and 3.7 of contrast ratio, which indicate that ESQWs and impedance-mismatched normally-off AFP improves NOB comparable to conventional S-SEEDs with large external bias. Furthermore, the AFP cavity structure reduces the minimum switching energy and switching time.