ABSTRACT
In this paper, we present an overview of the growth of InAs1-xSbx, In1-xT1xSb, and (InP)1-x(T1P3)x as potential materials for longwavelength (8-12 μm) infrared photodetector applications. Incorporation of thallium into InSb and InP resulted in a bandgap decrease of the alloys. Thallium incorporation has been evidenced by various techniques such as X-ray diffraction. Auger electron spectrometry, and photoconductivity measurements. Preliminary photodetectors fabricated from the grown materials are also reported. InAsSb photodetectors showed room temperature photoresponse up to 13 μm.
