ABSTRACT
Zn1-xMnxSe/ZnSe superlattices are grown by molecular beam epitaxy on GaAs(100) substrates and characterized by x-ray diffraction and Raman scattering. Higher-order satellite peaks up to 5th order in x-ray diffraction spectra have been observed for the first time, which indicates the sharpness and abruptness of the superlattice interfaces. Well resolved LO phonon peaks of Raman scattering from Zn1-xMnxSe barrier and ZnSe well layers are observed and the relatively small FWHM and ratio ofΓa/Γb confirm the formation of high quality superlattice. The frequency shifts of LO phonons due to the misfit strain are calculated. The results are in good agreement with the experiments.
