ABSTRACT
A PIN-like Si(p)/ZnSe(n-)ZnSe(n+) visible photodiode was successfully fabricated by CVD technique. n+- ZnSe layer was implemented by driving in the evaporated In metal. The unintentionally n--ZnSe was employed as an absorption layer which is sensitive on visible light range from red to violet. Under reversed bias condition, the studied device exhibits a breakdown voltage as large as 25V and a dark current of 3.5 μA/mm. In response to visible light, it is found that the device exhibit strong sensitivity in blue light. We obtained a responsivity of 0.125 μ A/lx for our unoptimized devices. Together with VLSI technology, the development of high-performance short wave-length detector on Si-substrate demonstrate high potential application to photoreceiver.
