ABSTRACT
The avalanche gain and breakdown voltage are calculated with varying parameters of charge density and multiplication layer width (MLW) in InP/InGaAs avalanche photodiode. As multiplication layer width increases, the breakdown voltage decreases in the range of thinner MLW than wo while the breakdown voltage increases in the range of thicker MLW than wo. Here, wo is a certain MLW where the breakdown voltage has the minimum value for given structure parameters. The value of wo moves to a larger value as absorption layer thickness increases. On the basis of above result, a floating guard ring avalanche photodiode was fabricated with the dimension of MLW of 0.6 ± 0.1 μm. Two-dimensional gain profile measurement with the aid of focused light beam showed that the avalanche gain at the curved junction was successfully suppressed.
