ABSTRACT
Monolithic GaAs Schottky photovoltaic device arrays with and without a self-aligned dielectric isolation have been fabricated and characterized to study the possible photo current leak between the Schottky metal and the underlying heavily doped layer. This leakage affects the output power of the array devices used in an electro-optic switch which provides excellent input-output voltage isolation for the application of power controls and telecommunications In order to reduce the leakage current, the photoresist pattern used for mesa etch was also used in the SiO2 sputtering deposition process An improvement of 20% in open circuit voltage and 7% in short circuit current for an array of 25 Schottky (Au) diodes has been observed by using this process.
