ABSTRACT
Ultraviolet photoconductive and photovoltaic detectors were fabricated using n-type GaN and p-n GaN homojunction, respectively. The frequency dependence and the decay of the photoresponse in GaN photoconductors was measured. This revealed the existence of deep level traps in the forbidden gap. A stationary photoconductivity lifetime of about 20 ms was determined. The spectral response of the photovoltaic devices was also measured. A modeling of this response allowed to calculate the hole diffusion length in n-type GaN to be ~0.1 μm.
