ABSTRACT
Most device characteristics of II-VI lasers with ZnMgSSe cladding layers are comparable to those of III-V lasers. The lowest threshold current density we achieved for a gain-guided laser was 460 A/cm2 under cw operation. A p-ZnTe/p-ZnSe multi-quantum well structure as a p-contact layer reduced the operating voltage to 4.7 V. The use of a GaAs buffer layer can reduce the density of pre-existing defects, resulting in a significant increase in device lifetime.
