ABSTRACT
This paper reports the first blue/green laser diodes grown on ZnSe substrates. The laser structure employed is a p-on-n separate confinement heterostructure (SCH) consisting of 0.8 |im thick ZnMgSSe cladding layers lattice-matched to ZnSe, 0.1 pm thick ZnSe light guiding layers, and a single 60-200 Å thick ZnCdSe quantum well. Green laser emission (507-517 nm; 2.443-2.394 eV) was observed at temperatures from 77-220 K using cw excitation at 77K and pulsed excitation (50 ns; 10-1 -10-4 duty cycle) at higher temperatures. Blue laser diodes with outputs at 485 nm (2.553 eV) at 77K have also been fabricated and tested.
