ABSTRACT
Electron Bragg mirrors grown on both sides of identical quantum wells are used for confining above-barrier states at different energies. By varying the thickness of the mirror layers, the intersubband transition energy between the bound state and the confined above-barrier state (quasi-bound state) changes over 110 meV in 40 Å wide GaAs/Al0.3Ga0.7As quantum wells. The quasi-bound state energy is calculated by considering a superlattice bandstructure and boundary conditions. Theoretical calculations for the absorption spectra with different electron mirrors are compared with experimental results
