ABSTRACT
Growth of InAs on InAs (111)A by molecular beam epitaxy has been studied using reflection high energy electron diffraction intensity oscillations. The period of the intensity corresponds to the flux of In for lower substrate temperatures and/or higher As fluxes and is independent of growth conditions. However, for higher substrate temperatures and or lower As fluxes, the period is longer than the value expected from the In flux and strongly depends on the growth conditions. A critical growth condition, defined as the boundary between the two regions, is a strong function of the As flux and substrate temperature. The increase of the period is explained by the deficiency of As on the growing surface due to its low sticking coefficient.
