ABSTRACT
A theoretical study of the optical properties of GaAs/AlAs quantum well structures in the presence of an electric field is presented near the type-I to type-II transition point. The band structure is calculated using a second nearest neighbor empirical sp 3 tight binding method. Intersubband transition energies and absorption coefficient are given as a function of the electric field. It is shown that the optical properties of these structures can be significantly modified with field near this point.
