ABSTRACT
We discuss a general theory for strained quantum-well lasers starting from an expression for amplified spontaneous emission. The electronic band structure, optical gain spectrum, refractive index change and the linewidth enhancement factor in the presence of carrier injection are calculated by taking into account the valence band-mixing effects. We show that our theoretical results compare very well with experimental data for strained InGaAsP quantum-well lasers obtained by measuring the amplified spontaneous emission spectrum as a function of the injection current.
