ABSTRACT
The characteristics of resonant tunneling devices, under the condition of quantum size effect, are theoretically studied in the AlGaAs/GaAs material system. The electron transport mechanisms and the current-voltage characteristics two-dimensional structures are investigated in double-barrier heterostructure electron devices. In a gated resonant tunneling diode (GRTD), we have seen that different resonances can be observed in forward and reverse collector bias by depletion effects. We also investigate the effect of barrier size on the existence of negative transconductance at a fixed emitter-collector bias with elastic and inelastic scattering mechanism.
