ABSTRACT
We propose an improved mobility model for hydrodynamic device simulation. The mobility is modeled as function of the total mean energy. Expressions for the individual valley mobilities are combined by means of the relative valley populations estimated by a modified Boltzmann distribution. Our model is based on steady-state Monte Carlo calculations and reflects the situation of intervalley transfer in III-V compounds. As an example the model is applied to Ga x In1- x As.
