ABSTRACT
Crystal quality of epitaxial InSb and InAs grown on GaAs at lower temperature is more critically dependent upon V/III supply ratio. The optimum supply ratio decreases as the growth temperature is reduced, with activation energy 0.4eV for InSb and 0.2eV for InAs. A growth model is proposed here to show that this optimum supply ratio corresponds to the geometrical average of sticking coefficients of group V element at the crystal planes of group III and group V element.
