ABSTRACT
A two - dimensional quantum mechanical model for analysing and interpreting Capacitance Voltage (C-V) carrier profiles in quantum - wells (Q W) has been developed. During (C-V) profiling when an external field is imposed on the (Q W) the Carrier distribution of the total system changes and depleted carriers from the barrier region move into the well to increase the net carrier concentration in the (Q W) . Our model considers the effects of quantum confinement and the effects of field. The results obtained by iterative solutions of Schrodinger's and Poisson's equations,give a better understanding and explanation of the experiements than the previous three - dimensional models that ignored the effects of quantum confinement.
