ABSTRACT
We present results on the integration of a Heterojunction Interband Tunneling Diode and Field Effect Transistors in the lattice matched InAlAs/ InGaAs/InP system to form quantum multifunctional devices. A three terminal integrated device exhibits the gate-controlled multi-on-off characteristics. The results of a new XNOR operation are also obtained. The speed is limited by that of the FET's and is expected to be at least twice as fast as conventional XNOR circuits because of fewer gate level delays.
