ABSTRACT
We have investigated the growth-rate enhancement effect in the selective-area growth of InP by metalorganic chemical vapor deposition using SiO2 masks. The experiments using isolated masks of rectangular shapes with various widths and lengths have proved that the growth rate as well as its distribution in the area adjacent to the mask is affected not only by the size of the mask but also the aspect ratio of it. Based on this result, the shape of the mask has been modified in order to obtain uniform layer thickness along the stripe direction between a pair of stripe masks. The results have shown that the uniformity in growth-rate distribution between the paired stripe masks is successfully improved by attaching small additional rectangles to the ends of the stripe masks.
