Production of P-type GaN in a Multi-wafer-rotating-disc Reactor

The production of high quality p-type GaN materials has been a potential problem for optoelectronic device applications. High quality GaN based material depositions have been achieved in small scale reactors but not on a mass production scale. For the first time we report here on the optical, electrical, and material properties of high quality p-GaN epitaxial deposition in a production scale MOCVD system which can produce 6x50 mm wafers per run.