ABSTRACT
We have investigated the CCl4 doping effect during MOCVD on patterned GaAs substrate. It was shown that the CCl4 flow rate was a very important parameter which enhanced the lateral growth rate of GaAs/AlGaAs on patterned substrates. With supplying of CCl4, the increase of GaAs lateral growth rate was remarkable and the increment could be described as a linear function of CCl4 flow rate. The lateral growth rate increased up to 700 °C, but it decreased for more elevated growth temperature. With increasing the V/III ratio, the lateral growth rate increased, but at higher V/III ratio the increment seems to be saturated. This novel characteristics can be utilized in fabricating very novel quantum wire like structure.
