The study of the interface between GaAs substrate and the regrowth GaAs layer formed by MBE and MOCVD

We have studied properties of interfaces between a GaAs substrate and a GaAs layer grown by MBE and MOCVD. DLTS measurement showed that hole trap levels exist in the interface by MBE, but no trap levels exist in the interface by MOCVD. SIMS measurement showed that carbon impurities of the growth interface by MOCVD are much lower than those by MBE. These results show that the MOCVD technique is suitable for obtaining good regrowth interface.