ABSTRACT
Erbium (Er) δ-doping to InP has been successfully performed by OMVPE for the first time and characterized systematically. Rutherford backscattering (RBS) measurements showed that the Er atoms located within the region of 6 nm which is the resolution limit of RBS, and that the Er sheet density was directly proportional to the Er source supply time. In 4.2 K PL measurements, a characteristic Er-related emission was observed in all the Er δ-doped specimens. X-ray crystal truncation rod (CTR) scattering measurements using synchrotron radiation revealed clearly the atomic-scale Er profiles in InP and the crystalline quality of InP overgrowth.
