ABSTRACT
In this work, the strained multi-quantum wells(MQWs) and multi-quantum barrier(MQB) were applied to decrease the threshold current and improve the characteristic temperature(To). The threshold current was greatly reduced by the optimization of the compressive strain, well number and width for 650nm laser diode(+0.5%, four 4.5nm QWs). The MQB was grown with the thickness controllability of three monolayer. The high temperature performance was clearly improved by incorporating a MQB. This improvement was due to enhancement of the potential barrier height between the active layer and p-cladding layer.
