ABSTRACT
For adjustment laser emission wavelength the knowledge about the active zone is important. At high-power laser diodes emitting in the wavelength region between 800 nm and 1017 nm strained InGaAs(P) is usually employed as active zone. Calibration of composition by growing thick layers that allow a analysis is based on the assumption of a strain independent In incorporation. This assumption does not hold for MOVPE growth. The different incorporation behaviour of In for relaxed and strained layers is shown. By increasing growth temperature from 650°C to 750°C and higher TMIn/(TMIn+TMGa) ratio a increased In segregation is obtained, however in the range of detection limit not In desorption. By optimization of strain the threshold current density of broad area laser diodes with infinite cavity length could be reduced to 53 A/cm2.
