MOVPE growth of (Ga,In)(As,P)/GaAs for high-power laser diodes

Ga_xIn_1-xAs_yP_1-y lattice matched to GaAs has been grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE) over the whole compositional range. The layer quality, the morphology and the p-type doping level of (In,Ga)(As,P) and (Ga,In)P show a strong dependence on substrate misorientation. The smoothest surface is obtained for GalnP on (100) off oriented to (11-1)B. For the quaternary the smoothest surfaces and best luminescence properties are obtained on (100) exact substrates. Growth of Ga_xIn_1-xAS_yP_1-y with small y on substrates misoriented to (11-1)B leads to ordering effects similar to the ternary InGaP. Preliminary tests on unmounted laser diodes (λ = 808 nm) indicate a high efficiency and very low internal losses (α ~ 2 cm^-1).