ABSTRACT
Heterointerface roughness of GaInAs/InP grown by organometallic vapor phase epitaxy (OMVPE) is studied by atomic force microscopy (AFM). In order to achieve an atomically flat region on the initial InP substrates during the initial annealing process, a temperature around 600°C is found to be critical under a high flow rate of PH3. Optimizing growth interruptions, monolayer steps and atomically flat terraces of 300 - 450 nm width were observed on the surface of a GaInAs quantum well layer on InP, Isotropic steps were oriented perpendicular to the [01̄1̄] direction. Using the formation of atomically flat heterointerfaces, a reduction in the quantum well width fluctuation is expected to be useful for the estimation of the intrinsic the phase coherent length of hot electrons in semiconductors using RTDs.
