ABSTRACT
Al(GalnP) is the basis material for the production of ultra high brightness LEDs. Since these devices are fabricated in mass production processes, it is necessary to perform the epitaxial growth in multiwafer machines. The requirements for such a machine are high throughput high efficiency and a good uniformity of the grown structures. These requirements are met by AIXTRON Planetary Reactors®. In this study we discuss results obtained in an AIX 2400 machine used for the growth of GalnP based materials. In this reactor a total wafer area of more than 400 cm2 can be grown in one run. GalnP has been grown both with phosphine and tertiarybutyl -phosphine as a group V precursor. The crystalline quality is demonstrated by DCXD half widths for GalnP layers similar to those of GaAs substrates. Room temperature PL mapping demonstrate the wavelength uniformity better 1 nm on a 2” GalnP wafer. Similar results were obtained for AlGalnP. GaInP grown using tertiarybutylphosphine show that V/III ratios as low as 26 can be used this way without affecting the quality of the GalnP films. Due to the high cracking efficiency for TBP growth could be performed at very low temperatures. Down to 615°C diffusion-controlled growth was found.
