Novel Empirical Expression and Kinetic Analysis for the Incorporation of As and P in InGaAsP Grown by Metal-Organic Vapor Phase Epitaxy

We present the novel empirical expression for As and P incorporation properties for MOVPE grown InGaAsP. From the MOVPE grown InGaAsP and InAsP composition data measured by X-ray diffraction, photoluminescence, and Auger electron spectroscopy, we deduce the linear relation between the relative distribution coefficient and the solid composition of InGaAsP, and constant k_As/P for InAsP. The relation between the relative distribution coefficient of two compete component As and P, i.e., k_As/P and solid composition can give intuitive information about the incorporation behavior of solid component in InGaAsP. We also investigated the dependence of relative distribution coefficient on growth temperature.