Study on HgCdTe/CdZnTe grown by Isothermal Vapor Phase Epitaxy

Hg_1-xCd_xTe films(x=0.3) have been grown on CdZnTe substrates by isothermal vapor phase epitaxy. The size of HgCdTe epilayer is in the range of 50 ~500 mm² in area. The composition uniformity measured by infrared spectrometer is ±0.003 in x value across the entire surface. HgCdTe epilayers annealed under Hg pressure around 370°C are p-type with a carrier concentration of mid 10¹⁵ to low 10¹⁶ cm^-3 at 77 K. The p-n junction diodes have been fabricated on p-HgCdTe epilayers. R₀A obtained from I-V curves of the diodes is in the range of 10³~10⁴ ohm-cm² at 77 K.