ABSTRACT
GaN films were prepared by hot-wall epitaxy (HWE) for the first time. Metallic Ga and NHg were used as sources and sapphire(0001) as substrate. GaN epitaxial films with optically flat surfaces were obtained by growing GaN films on GaN initial layers prepared by Ga predeposition on nitrided sapphire substrates and subsequent nitridation. Formation of epitaxial and relatively smooth GaN initial layer was confirmed through reflection high energy electron diffraction (RHEED) and atomic force microscope (AFM) measurements. In this paper, growth and characteristics of the GaN films prepared by the HWE are described.
