Formation of High Electrical Resistance Region in (InAs)/(AlSb) Superlattice by Ga Focused Ion Beam Implantation

doi:10.1201/9781003063025-45

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Formation of High Electrical Resistance Region in (InAs)/(AlSb) Superlattice by Ga Focused Ion Beam Implantation

ABSTRACT

A region with high electrical resistance as high as 2.7x10³Ω·cm can be formed in (InAs)16/(AlSb)22 Superlattice layer by 5x10¹⁵ cm^-2 Ga focused ion beam implantation and 400 °C-30 min annealing. The clear photoresponse is also observed in Ga ion implanted diode structures after annealing. Enhancement of the compositional intermixing by Ga ion implantation and the existence of residual defects are confirmed by Raman scattering measurement.