ABSTRACT
The radiation damage and the intermixing behavior induced by Ga ion implantation and subsequent thermal annealing have been studied for (InAs)16/(AlSb)16 SLs using Raman scattering. The compositional intermixing effects by Ga ion implantation are explained in terms of the increase of InSb mode intensity and the shift of AlAsSb-like mode frequency. Raman results show that the compositional intermixing depends sensitively on Ga ion fluence and annealing temperature and consists of two step modes. The first step intermixing occurs by collision effect during Ga ion implantation. The second step intermixing by low temperature annealing recovers the damage states caused by Ga ion implantation which induces the decreasing thermal stability of InAs/AlSb SL structures.
