ABSTRACT
We develop three new sulfur passivation techniques of GaAs. The first one is the electrochemical sulfur passivation, which can create a thick S-containing layer to prevent the GaAs surface to be reoxidized in air. The second technique is using an oxygen-free sulfurcontaining solvent --S2Cl2. It has been successfully used as a GaAs substrate preparing technique in the heteroepitaxial growth of II--VI wide gap semiconductors to improve the epilayer quality. The third technique is the sulfur vapor glow discharge method. It might be possible to eventually solve the problem of surface passivation for GaAs.
