ABSTRACT
The temperature dependence of photoluminescence (PL) properties of AlGaAs/GaAs quantum wire (QWR) grown by flow rate modulation epitaxy on V-grooved substrates is investigated. PL intensity from QWR is greatly enhanced by properly removing some parts of the AlGaAs barrier layers. PL from a 7.1 nm thick QWR could be observed easily even at room temperature. The full width at half maximum (FWHM) of the ground-state QWR emission peak increases with temperature at low temperatures but becomes almost independent on temperature at high temperatures, a very different behavior from that of a quantum well (QWL) sample in which the FWHM increases with temperature up to room temperature. At high temperatures, the FWHM of QWR is considerably narrower than that of the QWL sample. The suppressed thermal broadening of QWR PL linewidth could be expected easily from the sharp one dimensional density of states but has not been clearly observed experimentally until now.
