ABSTRACT
The Fourier transform near infrared absorption and photoluminescence spectroscopies have been employed to characterize and investigate some different single quantum well structures of compound semiconductors such as GaAs/InGaAs/GaAs and AlGaAsSb/GaInAsSb/AlGaAsSb. The twodimensional exciton and light hole subband behavior are emphasized except the characterization of the band structures for the investigated systems.
