ABSTRACT
Bound states in a GaAs-AlxGa1-xAs quantum well, grown by MBE using phase lock epitaxy were investigated by means of photoluminescence (PL) and PL excitation spectroscopy. An investigation on the localization effects of exciton trapped with defects and/or impurities was performed by means of temperature and excitation intensity dependent PL and PL excitation spectroscopies. When the detection energy was tuned at the bound exciton luminescence, distinct peak was resolved in the exciton absorption region between the two free exciton peaks corresponding to each islands having monolayer well-width difference. This line is prominent in a rather higher temperature range, and is interpreted to be originated from the exciton capture of neutral or ionized impurities.
