The band lineup of AlGaInP / AlInP indirect semiconductors

A key to achieve better carrier confinement in 0.6 μm laser diodes is to incorporate an AlInP layer into the AlGaInP cladding layer. The band lineup of (Al_0.7Ga_0.3)_0.5In_0.5P / Al_xIn_1-xP (x = 0.47 to 0.61) is studied at both the Γc and Xc points by measuring the optical transition energy of (Al_0.7Ga_0.3)_0.5In_0.5P, Al_0.53In_0.47P, and (Al_0.7Ga_0.3)_0.5In_0.5P / Al_xIn_1-xP super lattices. The energy level of Al_xIn_1-xP at the Xc point decreases by 0.09 eV as x increases from 0.47 to 0.61. At x=0.53, the share of the band offset for the conduction band at the Γc point is found to be 78%.