ABSTRACT
Temperature dependence of type-I exciton absorption in CdSe/ZnTe type-II superlattices is studied as a function of CdSe layer thickness. In a CdSe epilayer, exciton absorption exhibits strong temperature dependence, decreasing in intensity as the temperature is raised, and vanishing at T = 150 K. As the CdSe layer thickness is reduced in a CdSe/ZnTe superlattice, exciton thermal dissociation due to electron-LO-phonon coupling decreases, which is evidenced by the weaker temperature dependence of the exciton absorption in structures with thinner CdSe layers. When the thickness of CdSe is reduced to a nominal value of 125 Å, exciton absorption survives up to room temperature.
