ABSTRACT
Modified isothermal capacitance transient spectroscopy is utilized for the characterization of a lattice-mismatched InGaAs/AlGaAs heterointerface, which is inevitable in an AlGaAs/GaAs heterojunction bipolar transistor with a non-alloyed InGaAs ohmic contact layer. Anomalous signals are obtained under an isothermal condition in which the edge of the depletion layer of the p-n junction reaches the InGaAs/ AlGaAs interface. It is found that considering another path for the time dependent electron emission is effective for understanding the extremely sharp signal obtained. The temperature dependence of the signals is also well ascertained by using this modified explanation. There are two activation energies (0.62 and 0.26 eV) for multi-level transitions. The modified theory of the isothermal capacitance transient spectroscopy is useful for characterizing the electronic features of the lattice-mismatched heterointerface.
