Interband Transitions in CdxZn1-xTe/ZnTe Strained Single Quantum Wells Grown by Double–Well Temperature–Gradient Vapor Deposition

The electronic states in a Cd_xZn_1-xTe/ZnTe strained single quantum well grown by the simple method of double-well temperature-gradient vapor deposition have been investigated both experimentally and theoretically. X-ray diffractometry measurements were performed to characterize the structural properties of the Cd_xZn_1-xTe/ZnTe quantum well. Reflectivity and photoreflectance measurements showed several resonant excitations in the Cd_xZn_1-xTe quantum well, and photoluminescence measurements on the strained quantum well structures showed that the sharp excitonic transition from the 1st electron subband to the 1st hevey-hole band. Interband transition energies in the Cd_xZn_1-xTe quantum well were calculated by taking into account the strain effects.