ABSTRACT
We report intensity oscillations in the low temperature (T=4.2K) magnetoluminescence of a modulation-doped (Al,Ga)As/GaAs single heterojunction having two occupied subbands at zero field. For B > 1.9T applied in the direction parallel to the growth direction, luminescence peaks from the lowest Landau-level from the second subband are pronounced and show intensity oscillations nearly periodic with the inverse magnetic field. Self-consistent Landau-level calculations indicate that both the population of the second subband and the energy gap between Landau levels from this and the first subband reveal nearly periodic oscillations in inverse magnetic field. Oscillations in the luminescence intensity can be explained by the effect of population oscillations in the second subband.
