ABSTRACT
Deep level properties of S-, Se-, and Te-doped In1- x Ga x P layers have been studied by DLTS and capacitance-temperature measurements. In In0.32Ga0.68P layers, S, Se, and Te each form deep states whose activation energies are 0.26, 0.23, and 0.14 eV, respectively. In In0.49Ga0.51P layer, only S forms a deep state. From the investigation of defect formation by impurity species, the compositional dependence of binding energy, and the persistent photoconductivity, these deep donors axe attributed to the DX centers. The binding energy of S DX center is observed to be the largest in the investigated DX centers.
