ABSTRACT
Si/Si0.79Ge0.21 p-type modulation-doped single heterostructures were grown by molecular beam epitaxy with different growth temperatures and spacer layer thicknesses. The growth temperature dependence of hole mobility at low temperature is examined in the temperature range from 530 to 730 °C. The hole mobility increases with increasing growth temperature up to 680 °C and then decreases at higher growth temperature. This demonstrates that the dependence of hole mobility on growth temperature may be ascribed to the improvement of interface with increasing temperature.
