ABSTRACT
Photoluminescence measurements as a function of temperature and excitation intensity were carried out on the strained In0.2Ga0.8As/GaAs quantum wells grown by low pressure metalorganic chemical vapor deposition. By analysing the transition energies and linewidths as a function of temperature, and the transition energies versus excitation intensities at various temperatures, we demonstrate the photoluminescence technique which can be used for the evaluation of the structural disorder at the interfaces of the quantum-well heterostructures.
